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2N2060M_15 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. 2N2060M_15
Description  SILICON DUAL NPN TRANSISTOR
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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2N2060M
SILICON
DUAL NPN TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2060M is a silicon
dual NPN transistor utilizing two individual chips mounted
in a hermetically sealed metal case designed for
differential amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCER
80
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7.0
V
Continuous Collector Current
IC
500
mA
Power Dissipation (One Die)
PD
500
mW
Power Dissipation (Both Dice)
PD
600
mW
Power Dissipation (One Die, TC=25°C)
PD
1.5
W
Power Dissipation (Both Dice, TC=25°C)
PD
3.0
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=80V
2.0
nA
IEBO
VEB=5.0V
2.0
nA
BVCBO
IC=100μA
100
V
BVCER
IC=10mA, RBE=10Ω
80
V
BVCEO
IC=30mA
60
V
BVEBO
IE=100μA
7.0
V
VCE(SAT)
IC=50mA, IB=5.0mA
1.2
V
VBE(SAT)
IC=50mA, IB=5.0mA
0.9
V
hFE
VCE=5.0V, IC=10μA
25
150
hFE
VCE=5.0V, IC=100μA
30
150
hFE
VCE=5.0V, IC=1.0mA
40
150
hFE
VCE=5.0V, IC=10mA
50
200
fT
VCE=10V, IC=50mA, f=20MHz
60
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
15
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
85
pF
NF
VCE=10V, IC=300μA, RS=510Ω,
f=1.0kHz, BW=200Hz
8.0
dB
TO-78 CASE
R1 (2-December 2013)
www.centr a lsemi.com




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