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2N1711 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. 2N1711
Description  SILICON NPN TRANSISTOR
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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2N1711
SILICON
NPN TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N1711 is a silicon
NPN epitaxial planar transistor designed for small signal
general purpose switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCER
50
V
Emitter-Base Voltage
VEBO
7.0
V
Continuous Collector Current
IC
500
mA
Power Dissipation (TC=25°C)
PD
3.0
W
Power Dissipation
PD
0.8
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=60V
10
nA
IEBO
VEB=5.0V
5.0
nA
BVCBO
IC=100μA
75
V
BVCER
IC=10mA, RBE=10Ω
50
V
BVEBO
IE=100μA
7.0
V
VCE(SAT)
IC=150mA, IB=15mA
1.5
V
VBE(SAT)
IC=150mA, IB=15mA
1.3
V
hFE
VCE=10V, IC=10μA
20
hFE
VCE=10V, IC=100μA
35
hFE
VCE=10V, IC=10mA
75
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
40
fT
VCE=10V, IC=50mA, f=20MHz
70
MHz
Cob
VCB=10V, IE=0, f=100kHz
25
pF
Cib
VEB=0.5V, IC=0, f=100kHz
80
pF
NF
VCE=10V, IC=300μA, f=1.0kHz
8.0
dB
TO-39 CASE
R1 (23-April 2013)
www.centr a lsemi.com




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