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DMN63D8LDW-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN63D8LDW-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  DMN63D8LDW Document number: DS36021 Rev. 3 - 2 2 of 6 www.diodes.com November 2012 © Diodes Incorporated DMN63D8LDW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C ID 220 170 mA Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 260 210 mA Pulsed Drain Current (10 μs pulse, duty cycle = 1%) IDM 800 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 300 mW (Note 6) 400 Thermal Resistance, Junction to Ambient (Note 5) RθJA 435 °C/W (Note 6) 330 Thermal Resistance, Junction to Case (Note 6) RθJC 139 Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 µA VDS = 30V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ ±10.0 μA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 0.8 ⎯ 1.5 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ 2.8 Ω VGS = 10.0V, ID = 250mA ⎯ ⎯ 3.8 VGS = 5V, ID = 250mA ⎯ ⎯ 4.2 VGS = 4.5V, ID = 250mA ⎯ ⎯ 4.5 VGS = 4.0V, ID = 250mA ⎯ ⎯ 13 VGS = 2.5V, ID = 10mA Forward Transconductance gFS 80 ⎯ ⎯ mS VDS = 10V, ID = 0.115A Diode Forward Voltage VSD - 0.8 1.2 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss ⎯ 22.0 ⎯ pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss ⎯ 3.2 ⎯ Reverse Transfer Capacitance Crss ⎯ 2.0 ⎯ Gate Resistance RG ⎯ 79.9 ⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge VGS = 10V Qg ⎯ 0.87 ⎯ nC VGS = 10V, VDS = 30V, ID = 150mA Total Gate Charge VGS = 4.5V Qg ⎯ 0.43 ⎯ Gate-Source Charge Qgs ⎯ 0.11 ⎯ Gate-Drain Charge Qgd ⎯ 0.11 ⎯ Turn-On Delay Time tD(on) ⎯ 3.3 ⎯ nS VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25Ω Turn-On Rise Time tr ⎯ 3.2 ⎯ Turn-Off Delay Time tD(off) ⎯ 12.0 ⎯ Turn-Off Fall Time tf ⎯ 6.3 ⎯ Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. |
Similar Part No. - DMN63D8LDW-7 |
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Similar Description - DMN63D8LDW-7 |
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