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DMG6602SVTQ-13 Datasheet(PDF) 6 Page - Diodes Incorporated |
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DMG6602SVTQ-13 Datasheet(HTML) 6 Page - Diodes Incorporated |
6 / 10 page DMG6602SVTQ Document number: DS37643 Rev. 1 - 2 6 of 10 www.diodes.com December 2014 © Diodes Incorporated DMG6602SVTQ Electrical Characteristics – Q2 PMOS (@ T A = +25°C unless otherwise stated.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -30 - - V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS - - -1.0 µA VDS = -24V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) -1.0 - -2.3 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) - 73 99 95 140 m Ω VGS = -10V, ID = -2.7A VGS = -4.5V, ID = -2A Forward Transfer Admittance |Yfs| - 6 - S VDS = -5V, ID = -2.7A Diode Forward Voltage VSD - -0.8 -1.0 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss - 350 420 pF VDS = -15V, VGS = 0V, f = 1.2MHz Output Capacitance Coss - 50 100 Reverse Transfer Capacitance Crss - 45 80 Gate Resistance Rg - 17.1 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg - 4 6 nC VDS = -15V, VGS = -4.5V, ID = -3A Total Gate Charge (VGS = -10V) Qg - 7 9 VDS = -15V, VGS = -10V, ID = -3A Gate-Source Charge Qgs - 0.9 - Gate-Drain Charge Qgd - 1.2 - Turn-On Delay Time tD(on) - 4.8 - ns VGS = -10V, VDS = -15V, RG = 6Ω, RL = 15Ω Turn-On Rise Time tr - 7.3 - Turn-Off Delay Time tD(off) - 20 - Turn-Off Fall Time tf - 13 - Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 V , DRAIN -SOURCE VOLTAGE(V) Fig. 12 Typical Output Characteristics DS 0.0 2.0 4.0 6.0 8.0 V , GATE SOURCE VOLTAGE(V) Fig. 13 Typical Transfer Characteristics GS 0 2 4 6 8 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 |
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