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DMG6602SVTQ Datasheet(PDF) 3 Page - Diodes Incorporated |
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DMG6602SVTQ Datasheet(HTML) 3 Page - Diodes Incorporated |
3 / 10 page DMG6602SVTQ Document number: DS37643 Rev. 1 - 2 3 of 10 www.diodes.com December 2014 © Diodes Incorporated DMG6602SVTQ Electrical Characteristics – Q1 NMOS (@ T A = +25°C unless otherwise stated.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS - - 1.0 µA VDS = 24V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1.0 - 2.3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - 38 55 60 100 m Ω VGS = 10V, ID = 3.1A VGS = 4.5V, ID = 2A Forward Transfer Admittance |Yfs| - 4 - S VDS = 5V, ID = 3.1A Diode Forward Voltage VSD - 0.8 1 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss - 290 400 pF VDS = 15V, VGS = 0V, f = 1.2MHz Output Capacitance Coss - 40 80 Reverse Transfer Capacitance Crss - 40 80 Gate Resistance Rg - 1.4 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg - 4 6 nC VDS = 15V, VGS = 4.5V, ID = 3.1A Total Gate Charge (VGS = 10V) Qg - 9 13 VDS = 15V, VGS = 10V, ID = 3A Gate-Source Charge Qgs - 1.2 - Gate-Drain Charge Qgd - 1.5 - Turn-On Delay Time tD(on) - 3 - ns VGS = 10V, VDS = 15V, RG = 3Ω, RL = 4.7Ω Turn-On Rise Time tr - 5 - Turn-Off Delay Time tD(off) - 13 - Turn-Off Fall Time tf - 3 - Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 V , DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics DS 0.0 2.0 4.0 6.0 8.0 10.0 V , GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics GS 0 2 4 6 8 10 0 1 2 3 4 5 V = 5.0V DS |
Similar Part No. - DMG6602SVTQ_15 |
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Similar Description - DMG6602SVTQ_15 |
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