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DMG3413L Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMG3413L Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  DMG3413L Document number: DS35051 Rev. 4 - 2 2 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG3413L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 0.7 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 184 °C/W t<10s 115 Total Power Dissipation (Note 6) PD 1.3 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 94 °C/W t<10s 61 Thermal Resistance, Junction to Case RθJC 25 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS 8 V Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID 3.0 2.4 A t<10s TA = +25°C TA = +70°C ID 3.7 2.9 A Continuous Drain Current (Note 6) VGS = -2.5V Steady State TA = +25°C TA = +70°C ID 2.5 2.0 A t<10s TA = +25°C TA = +70°C ID 3.2 2.5 A Maximum Continuous Body Diode Forward Current (Note 6) IS 1.9 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 20 A Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS — — -1.0 µA VDS = -16V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = 8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -0.6 -0.55 -1.3 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) — 73 95 m Ω VGS = -4.5V, ID = -3.0A 95 130 VGS = -2.5V, ID = -2.6A 146 190 VGS = -1.8V, ID = -1A Forward Transfer Admittance |Yfs| — 8 - S VDS = -5V, ID = -3A Diode Forward Voltage VSD — -0.8 -1.25 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 857 — pF VDS = -10V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 54 — pF Reverse Transfer Capacitance Crss — 49 — pF Gate Resistnace Rg — 12.3 — Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge Qg — 9.0 — nC VGS = -4.5V, VDS = -15V, ID = -4A Gate-Source Charge Qgs — 1.6 — nC Gate-Drain Charge Qgd — 1.1 — nC Turn-On Delay Time tD(on) — 9.7 — ns VDS = -15V, VGS = -10V, RL = 15, RG = 6.0ID = -1A Turn-On Rise Time tr — 17.7 — ns Turn-Off Delay Time tD(off) — 268.8 — ns Turn-Off Fall Time tf — 64.2 — ns Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. |
Similar Part No. - DMG3413L_15 |
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Similar Description - DMG3413L_15 |
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