DMC2400UV

Document number: DS35537 Rev. 7 - 2

6 of 10

www.diodes.com

June 2013

© Diodes Incorporated

DMC2400UV

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

-20

—

—

V

—

—

-100

nA

Gate-Source Leakage

—

—

±1.0

A

—

—

±5.0

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

-0.5

—

-1.0

V

Static Drain-Source On-Resistance

—

0.67

0.97

Ω

—

0.7

1.0

—

0.9

1.5

—

1.2

2.0

—

1.5

3.0

—

5

—

Forward Transfer Admittance

—

0.7

—

S

Diode Forward Voltage

—

-0.75

-1.2

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

—

46.1

—

pF

f = 1.0MHz

Output Capacitance

—

7.2

—

Reverse Transfer Capacitance

—

4.9

—

Gate Resistance

—

14.3

—

Ω

—

0.5

—

nC

—

0.85

—

Gate-Source Charge

—

0.09

—

Gate-Drain Charge

—

0.09

—

Turn-On Delay Time

—

8.5

—

ns

Turn-On Rise Time

—

4.3

—

Turn-Off Delay Time

—

20.2

—

Turn-Off Fall Time

—

19.2

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

01

2

3

4

5

-V , DRAIN -SOURCE VOLTAGE (V)

Fig. 13 Typical Output Characteristics

DS

0

0.2

0.4

0.6

0.8

1.0

01

2

3

4

-V , GATE SOURCE VOLTAGE(V)

Fig. 14 Typical Transfer Characteristics

GS

0

0.2

0.4

0.6

0.8

1.0

T = 125 C

A

