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DMC25D1UVT-7 Datasheet(PDF) 3 Page - Diodes Incorporated |
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DMC25D1UVT-7 Datasheet(HTML) 3 Page - Diodes Incorporated |
3 / 9 page DMC25D1UVT Document number: DS37507 Rev. 2 - 2 3 of 9 www.diodes.com April 2015 © Diodes Incorporated DMC25D1UVT Electrical Characteristics – Q2 (@T A = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage BVDSS -12 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS — — -1 µA VDS = -6.4V, VGS = 0V Gate-Source Leakage IGSS — — ±10 µA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 10) Gate Threshold Voltage VGS(TH) -0.35 — -1.5 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — — 55 m Ω VGS = -4.5V, ID = -2.8A — — 70 VGS = -2.5V, ID = -2.5A — — 100 VGS = -1.8V, ID = -2.0A Diode Forward Voltage VSD — — -1.2 V VGS = 0V, IS = -0.6A DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Ciss — 9.7 — pF VDS = -6V, VGS = 0V, f = 1MHz Output Capacitance Coss — 393 — Reverse Transfer Capacitance Crss — 1.9 — Gate Resistance Rg — 1846 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg — 24.5 — nC VDS = -6V, ID = -2.8A Gate-Source Charge Qgs — 3.3 — Gate-Drain Charge Qgd — 7.3 — Turn-On Delay Time tD(ON) — 1.2 — µs VGS = -4.5V, VDS = -6V, RG = 6Ω, ID = -2.8A Turn-On Rise Time tR — 2.7 — Turn-Off Delay Time tD(OFF) — 9.8 — Turn-Off Fall Time tF — 6.5 — Notes: 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to production testing. Typical Characteristics - N-CHANNEL 0.0 0.3 0.6 0.9 1.2 1.5 0 0.5 1 1.5 2 2.5 3 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic V GS=1.2V V GS=1.5V V GS=2.0V V GS=2.5V V GS=4.5V V GS=4.0V V GS=3.0V V GS=3.5V 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 2 2.5 3 V GS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic V DS= 5V -55 ℃ 25 ℃ 85 ℃ 125 ℃ 150 ℃ |
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