DMC25D1UVT

Document number: DS37507 Rev. 2 - 2

3 of 9

www.diodes.com

April 2015

© Diodes Incorporated

DMC25D1UVT

Electrical Characteristics

C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 10)

Drain-Source Breakdown Voltage

-12

—

—

V

Zero Gate Voltage Drain Current

—

—

-1

µA

Gate-Source Leakage

—

—

±10

µA

ON CHARACTERISTICS (Note 10)

Gate Threshold Voltage

-0.35

—

-1.5

V

Static Drain-Source On-Resistance

—

—

55

m

Ω

—

—

70

—

—

100

Diode Forward Voltage

—

—

-1.2

V

DYNAMIC CHARACTERISTICS (Note 11)

Input Capacitance

—

9.7

—

pF

f = 1MHz

Output Capacitance

—

393

—

Reverse Transfer Capacitance

—

1.9

—

Gate Resistance

—

1846

—

Ω

—

24.5

—

nC

Gate-Source Charge

—

3.3

—

Gate-Drain Charge

—

7.3

—

Turn-On Delay Time

—

1.2

—

µs

Turn-On Rise Time

—

2.7

—

Turn-Off Delay Time

—

9.8

—

Turn-Off Fall Time

—

6.5

—

Notes:

10. Short duration pulse test used to minimize self-heating effect.

11. Guaranteed by design. Not subject to production testing.

Typical Characteristics - N-CHANNEL

0.0

0.3

0.6

0.9

1.2

1.5

0

0.5

1

1.5

2

2.5

3

V

Figure 1. Typical Output Characteristic

V

V

V

V

V

V

V

V

0

0.2

0.4

0.6

0.8

1

0

0.5

1

1.5

2

2.5

3

V

Figure 2. Typical Transfer Characteristic

V

-55

℃

25

℃

85

℃

125

℃

150

℃