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STT4660 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # STT4660
Description  Super high dense cell design for low RDS(ON).
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STT4660 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
60
V
1
IGSS
±100
nA
VGS(th)
V
18
gFS
S
CISS
2250
pF
COSS
197
pF
CRSS
150
pF
Qg
47
nC
57
68
25
tD(ON)
38
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=30V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=30V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=8.5A
VDS=5V , ID=8.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=4.5V , ID=6.8A
23
27
36
m ohm
c
f=1.0MHz
c
STT4660
Ver 1.0
www.samhop.com.tw
Dec,31,2009
2
VSD
nC
Qgs
nC
Qgd
5
10.5
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=30V,ID=8.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2A
0.765
1.2
V
IS
Maximum Continuous Drain-Source Diode Forward Current
2
A
Notes
nC
18
VDS=30V,ID=8.5A,VGS=10V
VDS=30V,ID=8.5A,VGS=4.5V
b
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
_
_
_
1
2
3
24


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