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STT4660 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STT4660 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 7 page S mHop Microelectronics C orp. a STT4660 Symbol VDS VGS IDM A ID Units Parameter 60 V V ±20 Gate-Source Voltage Drain-Source Voltage PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 60V 8.5A 36 @ VGS=4.5V 23 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount Package. N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed b A Ver 1.0 www.samhop.com.tw Dec,31,2009 1 Details are subject to change without notice. TC=25°C W PD °C -55 to 150 TC=25°C Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG TC=70°C A EAS mJ Single Pulse Avalanche Energy d TC=70°C W a a 144 8.5 57 3 Green Product 6.8 1.9 G D S STT SERIES SO - 223 T G S 42 °C/W THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient R JA a |
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