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STT3414 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STT3414 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 7 page S mHop Microelectronics C orp. a STT3414 Symbol VDS VGS IDM A ID Units Parameter 30 V V ±12 Gate-Source Voltage Drain-Source Voltage PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 30V 7A 42 @ VGS=4.5V 33 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount Package. N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed b A Ver 1.0 www.samhop.com.tw Aug,23,2011 1 Details are subject to change without notice. W PD °C -55 to 150 TA=25°C Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG TA=70°C A EAS mJ Single Pulse Avalanche Energy d TA=70°C W a a 9 7 28 3 Gre rr P Pr P P o rr 5.6 1.9 G D S 42 °C/W THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient R JA a TA=25°C G G S S STT SERIES SOT-223 D D D D 57 @ VGS=2.5V |
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