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STT622S Datasheet(PDF) 2 Page - SamHop Microelectronics Corp. |
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STT622S Datasheet(HTML) 2 Page - SamHop Microelectronics Corp. |
2 / 7 page Symbol Min Typ Max Units BVDSS 60 V 1 IGSS ±100 nA VGS(th) V 61 gFS S CISS 720 pF COSS 52 pF CRSS 39 pF Qg 12.5 nC 12 20 14.5 tD(ON) 12 ns tr ns tD(OFF) ns tf ns VDS=25V,VGS=0V SWITCHING CHARACTERISTICS VDD=30V ID=1A VGS=10V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time m ohm VGS=10V , ID=4.2A VDS=5V , ID=4.2A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance IDSS uA Gate Threshold Voltage VDS=VGS , ID=250uA VDS=48V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS VGS=4.5V , ID=3.7A 76 74 100 m ohm c f=1.0MHz c STT622S Ver 1.0 www.samhop.com.tw Jul,30,2010 2 nC Qgs nC Qgd 1.5 3.2 Gate-Drain Charge Gate-Source Charge VDS=30V,ID=4.2A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS nC 6 VDS=30V,ID=4.2A,VGS=10V VDS=30V,ID=4.2A,VGS=4.5V VSD Diode Forward Voltage VGS=0V,IS=1A 0.79 1.2 V Notes b a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) _ _ _ 1 1.9 3 10.5 |
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