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STS8207 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STS8207 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 7 page S mHop Microelectronics C orp. a STS8207 Symbol VDS VGS IDM 100 W A PD °C 1.25 -55 to 150 ID Units Parameter 20 4.5 18 °C/W V V ±12 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 20V 4.5A 36 @ VGS=3.7V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b A Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Ambient R JA Ver 1.0 www.samhop.com.tw May,07,2012 1 Details are subject to change without notice. a TA=25°C ESD Protected. S 1 S 2 G 1 D1 G 2 D2 TA=70°C 3.6 A TA=70°C 0.8 W Dual N-Channel Enhancement Mode Field Effect Transistor Gre rr P Pr P P o rr TSOT 26 Top View S1 D1/D2 S2 G1 D1/D2 G2 1 2 3 6 5 4 49 @ VGS=2.5V 34 @ VGS=4.0V 40 @ VGS=3.1V |
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