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STS6415 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # STS6415
Description  Super high dense cell design for low RDS(ON).
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS6415 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
-20
V
1
IGSS
±10
uA
VGS(th)
-0.5
V
m ohm
VGS=-4.5V , ID=-1.4A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=-1mA
VDS=-16V , VGS=0V
VGS=±10V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=-250uA
ON CHARACTERISTICS
STS6415
Ver 1.0
-0.8
-1.5
gFS
6
S
VSD
CISS
347
pF
COSS
100
pF
CRSS
81
pF
Qg
17
nC
30
nC
Qgs
15
nC
Qgd
8.3
tD(ON)
5
ns
tr
0.4
ns
tD(OFF)
2.2
ns
tf
ns
Gate-Drain Charge
VDS=-10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-16V
ID=-1.4A
VGS=-4.5V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=-5V , ID=-1.4A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Diode Forward Voltage
Reverse Transfer Capacitance
VGS=-2.5V , ID=-1.4A
m ohm
c
f=1.0MHz
c
VDS=-16V,ID=-2.8A,
VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=-0.5A
-0.8
-1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
c.Guaranteed by design, not subject to production testing.
_
_
www.samhop.com.tw
Sep,14,2012
2
_
76
100
102
138
VGS=-3.1V , ID=-1.4A
m ohm
90
121
m ohm
VGS=-4.0V , ID=-1.4A
80
105
m ohm
VGS=-3.7V , ID=-1.4A
83
110
62
82
74
65
68


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