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STS3417 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STS3417 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 7 page S mHop Microelectronics C orp. a PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max -30V -3A 96 @ VGS=-4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. P-Channel Enhancement Mode Field Effect Transistor www.samhop.com.tw Aug,29,2012 1 Details are subject to change without notice. SOT -23 G S D STS3417 Ver 1.0 Gr P Pr P P THERMAL CHARACTERISTICS 100 Thermal Resistance, Junction-to-Ambient R JA °C/W Symbol VDS VGS IDM A ID Units Parameter -30 -3 -11 V V ±12 Gate-Source Voltage Drain-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed b A TA=25°C W PD °C 1.25 -55 to 150 TA=25°C Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG ESD Protected. 123 @ VGS=-2.5V S G D a a a 100 @ VGS=-4.0V 103 @ VGS=-3.7V 111 @ VGS=-3.1V |
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