MMBT2222ALT1 datasheet(2/5 Pages) LRC

Part #	MMBT2222ALT1

Description	General Purpose Transistors(NPN Silicon)

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Manufacturer	LRC [Leshan Radio Company]

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LESHAN RADIO COMPANY, LTD.

O4–2/5

MMBT2222LT1

MMBT2222ALT1

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

hFE

––

(I C = 0.1 mAdc, V CE = 10 Vdc)

35

––

(I C = 1.0 mAdc, V CE = 10 Vdc)

50

––

(I C = 10 mAdc, V CE = 10 Vdc)

75

—

(I C = 10 mAdc, V CE = 10 Vdc,T A= –55°C )

MMBT2222A only

35

—

(I C = 150 mAdc, V CE = 10 Vdc) (3)

100

300

(I C = 150 mAdc, V CE = 1.0 Vdc) (3)

50

––

(I C = 500 mAdc, V CE = 10 Vdc)(3)

MMBT2222

30

––

MMBT2222A

40

—

Collector–Emitter Saturation Voltage(3)

VCE(sat)

Vdc

(I C = 150 mAdc, I B = 15 mAdc)

MMBT2222

––

0.4

MMBT2222A

––

0.3

(I C = 500mAdc, I B = 50 mAdc)

MMBT2222

––

1.6

MMBT2222A

––

1.0

Base–Emitter Saturation Voltage

V BE(sat)

Vdc

(I C = 150 mAdc, I B = 15 mAdc)

MMBT2222

––

1.3

MMBT2222A

0.6

1.2

(I C = 500 mAdc, I B = 50 mAdc)

MMBT2222

––

2.6

MMBT2222A

––

2.0

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product(4)

MMBT2222

f T

250

––

MHz

(I C = 20mAdc, V CE= 20Vdc, f = 100MHz)

MMBT2222A

300

––

Output Capacitance(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)

C obo

––

8.0

pF

Input Capacitance

MMBT2222

C ibo

––

30

pF

(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)

MMBT2222A

––

25

Input Impedance(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT2222A

h ie

2.0

8.0

k

Ω

(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)

MMBT2222A

0.25

1.25

Voltage Feedback Ratio(V CE=10 Vdc, I C= 1.0mAdc, f =1.0kHz) MMBT2222A

h re

–-

8.0

X 10

–4

(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)

MMBT2222A

—

4.0

Small–Signal Current Gain(VCE=10Vdc,I C=1.0mAdc, f=1.0kHz) MMBT2222A

h fe

50

300

—

(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)

MMBT2222A

75

375

Output Admittance(V CE=10 Vdc, I C = 1.0 mAdc,f =1.0 kHz) MMBT2222A

h oe

5.0

35

µmhos

(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)

MMBT2222A

25

200

Curren Base Time Comstant

(V CB= 20 Vdc, I E = 20 mAdc, f = 31.8 MHz)

MMBT2222A

rb, C C

––

150

ps

Noise Figure(VCE=10Vdc, IC=100

µAdc, R

S=1.0k

Ω, f =1.0kHz) MMBT2222A

NF

––

4.0

dB

SWITCHING CHARACTERISTICS

Delay Time

(V CC = 30 Vdc, V EB(off) = – 0.5 Vdc

t d

—10

Rise Time

I C = 150 mAdc, I B1 = 15 mAdc)

t r

—25

ns

Storage Time

(V CC = 30 Vdc, I C = 150 mAdc

t s

—

225

ns

Fall Time

I B1 = I B2 = 15 mAdc)

t f

—60

3. Pulse Test: Pulse Width <300

µs, Duty Cycle <2.0%.

4.f T is defined as the frequency at which h fe extrapolates to unity.

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