LESHAN RADIO COMPANY, LTD.

MMBD352WT1–1/2

Dual Schottky Barrier Diode

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

7.0

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

200

mW

Derate above 25°

1.6

mW/°C

Thermal Resistance, Junction to Ambient

625

°C/W

Total Device Dissipation

300

mW

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

417

°C/W

Junction and Storage Temperature

–55 to +150

°C

DEVICE MARKING

MMBD352WT1 = M5

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Forward Voltage

—

0.60

V

Reverse Voltage Leakage Current

µA

—

0.25

—

10

Capacitance

C

—

1.0

pF

1. FR–5 = 1.0

2. Alumina = 0.4

These devices are designed primarily for UHF mixer applications but are

suitable also for use in detector and ultra–fast switching circuits.

• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

MMBD352WT1

1

3

2

CASE 419–02 , STYLE 9

SOT–323 / SC – 70

2

CATHODE

3

CATHODE/ANODE

1

ANODE