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STF2458A Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STF2458A Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 6 page Suface Mount Package. S mHop Microelectronics C orp. a STF2458A Symbol VDS VGS IDM 75 W A PD °C 1.67 -55 to 150 ID Units Parameter 24 10 48 °C/W V V ±12 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 24V 10A 10.5 @ VGS=4.0V 10.0 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b A Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Ambient R JA Ver 1.0 www.samhop.com.tw Jun,16,2011 1 Details are subject to change without notice. a TA=25°C TA=70°C A TA=70°C W Dual N-Channel Enhancement Mode Field Effect Transistor Gre rr e P Pr P P o rr ESD Protected. G2 S1 S1 G1 S2 S2 1 2 3 4 5 6 Bottom Drain Contact 8 1.07 G1 S1 S1 T T D DF F N N 2 2X X 5 5 G2 S2 S2 (Bottom view) P P IIN N 1 1 D1/D2 12.0 @ VGS=3.1V 15.5 @ VGS=2.5V 11.0 @ VGS=3.7V |
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