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STBP60L60A Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STBP60L60A Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 7 page S mHop Microelectronics C orp. a STB/P60L60A Symbol VDS VGS IDM EAS 1.2 62.5 W A PD °C 125 -55 to 175 ID Units Parameter 60 65 190 °C/W V V ±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS °C/W 156 mJ PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Typ 60V 65A 15 @ VGS=10V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. STB S ER IE S TO-263(DD-P AK ) G G S S D D STP S ER IE S TO-220 S S D D G G S G D N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous a TC=25°C -Pulsed b A Avalanche Energy d Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA Ver 3.0 www.samhop.com.tw Oct,13,2011 1 Details are subject to change without notice. A 54 TC=70°C TC=70°C 87.5 W Gr P Pr P P |
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