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FCX1051A Datasheet(PDF) 3 Page - Diodes Incorporated |
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FCX1051A Datasheet(HTML) 3 Page - Diodes Incorporated |
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3 / 6 page  FCX1051A Issue 2 - July 2007 3 www.zetex.com © Zetex Semiconductors plc 2007 Electrical characteristics (@ Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO 150 V IC = 100µA Collector-emitter breakdown voltage VCES 150 V IC = 100µA Collector-emitter breakdown voltage VCEO 40 V IC = 10mA Collector-emitter breakdown voltage VCEV 150 V IC =100µA, VEB = 1V Emitter-base breakdown voltage V(BR)EBO 5 V IE = 100µA Collector cut-off current ICBO 0.3 10 nA VCB = 120V Emitter cut-off current IEBO 0.3 10 nA VEB = 4V Collector emitter cut- off current ICES 0.3 10 nA VCES = 120V Collector-emitter saturation voltage VCE(sat) 17 25 mV IC = 0.2A, IB = 10mA (*) NOTES: (*) Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%. 85 120 mV IC = 1A, IB = 10mA (*) 140 180 mV IC = 2A, IB = 20mA (*) 170 250 mV IC = 3A, IB = 40mA (*) 250 340 mV IC = 5A, IB = 100mA (*) Base-emitter saturation voltage VBE(sat) 880 1000 mV IC = 3A, IB = 40mA (*) Base-emitter turn-on voltage VBE(on) 840 950 mV IC = 3A, VCE = 2V (*) Static forward current transfer ratio hFE 290 440 1200 IC = 10mA, VCE = 2V (*) 270 450 IC = 1A, VCE = 2V (*) 270 360 IC = 3A, VCE = 2V (*) 130 220 IC = 5A, VCE = 2V (*) 40 55 IC = 10A, VCE = 2V (*) Transition frequency fT 155 MHz IC = 50mA, VCE = 10V f = 100MHz Output capacitance Cobo 27 40 pF VCB = 10V, f = 1MHz Switching times ton 220 ns IC = 3A, IB = 30mA, VCC = 10V toff 540 ns IC = 3A, IB = 30mA, VCC = 10V |
Similar Part No. - FCX1051A_15 |
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Similar Description - FCX1051A_15 |
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