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FCX718 Datasheet(PDF) 1 Page - Diodes Incorporated |
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FCX718 Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 3 page SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * 6A Peak Pulse Current * Excellent H FE Characteristics up to 6Amps * Extremely Low Saturation Voltage E.g. 16mv Typ. * Extremely Low Equivalent On-resistance; R CE(sat) 96mΩ at 2.5A Partmarking Detail - 718 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ** ICM -6 A Continuous Collector Current IC -2.5 A Base Current IB -500 mA Power Dissipation at Tamb=25°C Ptot 1 † 2 ‡ W W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. C B C E FCX718 |
Similar Part No. - FCX718_15 |
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Similar Description - FCX718_15 |
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