CMPSH-3

CMPSH-3A

CMPSH-3C

CMPSH-3S

SURFACE MOUNT

SILICON SCHOTTKY DIODES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPSH-3 series

types are Silicon Schottky diodes designed for surface

mount fast switching applications requiring a low

forward voltage drop.

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

VRRM

30

V

Continuous Forward Current

IF

100

mA

Peak Repetitive Forward Current

IFRM

350

mA

Peak Forward Surge Current, tp=10ms

IFSM

750

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IR

VR=25V

90

500

nA

IR

VR=25V, TA=100°C

25

100

μA

BVR

IR=100μA

30

V

VF

IF=2.0mA

0.29

0.33

V

VF

IF=15mA

0.40

0.45

V

VF

IF=100mA

0.74

1.00

V

CT

VR=1.0V, f=1.0MHz

7.0

pF

trr

IF=IR=10mA, Irr=1.0mA, RL=100Ω

5.0

ns

The following configurations are available:

CMPSH-3

SINGLE

MARKING CODE: D95

CMPSH-3A

DUAL, COMMON ANODE

MARKING CODE: DB1

CMPSH-3C

DUAL, COMMON CATHODE

MARKING CODE: DB2

CMPSH-3S

DUAL, IN SERIES

MARKING CODE: DA5

SOT-23 CASE

R6 (27-January 2010)

www.centra lsemi.com