SP2013 datasheet(2/8 Pages) SAMHOP

Part #	SP2013

Description	Super high dense cell design for low RDS(ON).

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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2 / 8 page

Ver 1.1

Symbol

Min

Typ

Max

Units

BVDSS

-20

V

-1

IGSS

±100

nA

VGS(th)

-0.5

V

m ohm

VGS=-4.5V , ID=-4.25A

RDS(ON)

Drain-Source On-State Resistance

IDSS

uA

Gate Threshold Voltage

VDS=VGS , ID=-1.0mA

VDS=-16V , VGS=0V

VGS= ±12V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

ON CHARACTERISTICS

SP2013

-0.9

-1.3

gFS

25

S

CISS

1860

pF

COSS

300

pF

CRSS

258

pF

Qg

39

nC

81

nC

Qgs

126

nC

Qgd

58

tD(ON)

23

ns

tr

1.8

ns

tD(OFF)

9.2

ns

tf

ns

Gate-Drain Charge

VDS=-10V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=-16V

ID=-4.25A

VGS=-4.5V

RGEN= 6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

VDS=-10V , ID=-4.25A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

Forward Transconductance

Reverse Transfer Capacitance

VGS=-4.0V , ID=-4.25A

m ohm

c

f=1.0MHz

c

VDS=-16V,ID=-8.5A,

VGS=-4.5V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VSD

Diode Forward Voltage

VGS=0V,IS=-8.5A

-0.85

-1.2

V

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Drain current limited by maximum junction temperature.

_

www.samhop.com.tw

Jul,18,2013

2

_

16

20

16.5

21

VGS=-3.7V , ID=-4.25A

m ohm

VGS=-2.5V , ID=-4.25A

m ohm

22

28

12

12.5

18

VGS=-3.1V , ID=-4.25A

m ohm

19

25

14

17

22

13

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