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SDT02N02 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

Part # SDT02N02
Description  S uper high dense cell design for low R DS (ON).
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SDT02N02 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp.

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S mHop Microelectronics C orp.
a
SDT02N02
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (
Ω) Typ
200V
2A
2.5 @ VGS=10V
N-Channel Enhancement Mode Field Effect Transistor
www.samhop.com.tw
Jun,07,2012
1
Details are subject to change without notice.
Ver 1.0
Green
Product
Symbol
VDS
VGS
IDM
A
ID
Units
Parameter
200
2
13
V
V
±30
Gate-Source Voltage
Drain-Source Voltage
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Limit
Drain Current-Continuous
-Pulsed
a
A
42
W
PD
°C
2.98
-55 to 175
°C/W
TA=25°C
THERMAL CHARACTERISTICS
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
TJ, TSTG
Thermal Resistance, Junction-to-Ambient
R JA
TA=25°C
S urface Mount P ackage.
FE AT UR E S
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
G
D
S
G
S
SOT-223


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