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CTLSH3-30M833S Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CTLSH3-30M833S Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage VR 30 V Average Forward Current IO 3.0 A Peak Forward Surge Current, tp=8.3ms IFSM 25 A Power Dissipation (Note 1) PD 4.5 W Power Dissipation (Note 2) PD 4.0 W Power Dissipation (Note 3) PD 2.5 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance (Note 1) ΘJA 27.78 °C/W Thermal Resistance (Note 2) ΘJA 31.25 °C/W Thermal Resistance (Note 3) ΘJA 50.00 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IR VR=30V 1.0 mA BVR IR=5.0mA 30 V VF IF=500mA 0.30 V VF IF=1.0A 0.35 V VF IF=2.0A 0.40 V VF IF=3.0A 0.45 V CTLSH3-30M833S SURFACE MOUNT LOW VF SILICON SCHOTTKY RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH3-30M833S is a high performance 3.0 Amp Silicon Schottky Rectifier designed for applications where small size and operational efficiency are prime requirements. With a maximum power dissipation of 4.5W, this leadless package design has a watts per unit area at least twice that of equivalent packaged devices. MARKING CODE: CHA1S FEATURES: • High Current (IF=3.0A) • High Thermal Efficiency • Low Leakage/Low VF • 3 x 3mm TLM™ case Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 75 mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 75 mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 25 mm2 TLM833S CASE R0 (25-March 2010) www.centra lsemi.com • Device is Halogen Free by design |
Similar Part No. - CTLSH3-30M833S_15 |
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Similar Description - CTLSH3-30M833S_15 |
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