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TSM9933DCSRL Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM9933DCSRL Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 6 page  TSM9933DCS -20V P-Channel Power MOSFET 1/6 Version: D14 SOP-8 Key Parameter Performance Parameter Value Unit VDS -20 V RDS(on) (max) VGS = -4.5V 60 mΩ VGS = -2.7V 78 VGS = -2.5V 85 Qg 6 nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Block Diagram Dual P-Channel MOSFET Ordering Information Part No. Package Packing TSM9933DCS RL SOP-8 2.5kps / 13’’ Reel TSM9933DCS RLG SOP-8 2.5kps / 13’’ Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (TA=25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current, VGS @ 4.5V. ID -4.7 A Pulsed Drain Current, VGS @ 4.5V IDM -20 A Continuous Source Current (Diode Conduction) (Note 1,2) IS -2.5 A Maximum Power Dissipation TA=25 oC PD 2 W TA=70 oC 1.3 Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance RӨJC 30 oC/W Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 62.5 oC/W Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 |
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