BC847BLP

Document number: DS30525 Rev. 12 - 2

2 of 5

www.diodes.com

May 2015

© Diodes Incorporated

BC847BLP

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

50

V

Collector-Emitter Voltage

45

V

Emitter-Base Voltage

6.0

V

Collector Current

100

mA

Peak Pulse Collector Current

200

mA

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

400

mW

(Note 6)

1,000

Thermal Resistance, Junction to Ambient

(Note 5)

310

C/W

(Note 6)

120

Thermal Resistance, Junction to Lead

(Note 7)

120

°C/W



Operating and Storage and Temperature Range

-55 to +150

°C

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

200

V

B

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

50

—

—

V

Collector-Emitter Breakdown Voltage (Note 9)

45

—

—

V

Emitter-Base Breakdown Voltage

6

—

—

V

DC Current Gain

200

350

450

—

Collector-Emitter Saturation Voltage (Note 9)

—

80

200

250

600

mV

Base-Emitter Saturation Voltage (Note 9)

—

—

700

900

—

—

mV

Base-Emitter Voltage (Note 9)

580

—

640

725

700

770

mV

Collector-Cutoff Current

—

—

—

—

15

5.0

nA

µA

Gain Bandwidth Product

100

—

—

MHz

f = 100MHz

Collector-Base Capacitance

—

3.0

—

pF

Notes:

5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air

conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.

6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.

7. Thermal resistance from junction to solder-point (on the exposed collector pad).

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

9. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.