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TSM850N06CX Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM850N06CX Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 5 page  TSM850N06CX 60V N-Channel Power MOSFET 2/5 Version: A14 Electrical Specifications (T C = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 60 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 6A RDS(on) -- 76 85 m Ω VGS = 4.5V, ID = 3A -- 89 100 Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.2 2.0 2.5 V Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V IDSS -- -- 1 µA VDS = 48V, TJ = 125°C -- -- 10 Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance (Note 3) VDS = 10V, ID = 3A gfs -- 7 -- S Dynamic Total Gate Charge (Note 3,4) VDS = 48V, ID = 6A, VGS = 10V Qg -- 9.3 -- nC Gate-Source Charge (Note 3,4) Qgs -- 2.1 -- Gate-Drain Charge (Note 3,4) Qgd -- 1.8 -- Input Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz Ciss -- 500 -- pF Output Capacitance Coss -- 45 -- Reverse Transfer Capacitance Crss -- 16 -- Switching Turn-On Delay Time (Note 3,4) VDD = 30V, ID = 1A, VGS = 10V, RG = 3.3Ω td(on) -- 2.9 -- ns Turn-On Rise Time (Note 3,4) tr -- 9.5 -- Turn-Off Delay Time (Note 3,4) td(off) -- 18.4 -- Turn-Off Fall Time (Note 3,4) tf -- 5.3 -- Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode in the MOSFET IS -- -- 6.1 A Maximum Pulse Drain-Source Diode Forward Current ISM -- -- 24.4 A Diode-Source Forward Voltage VGS = 0V, IS = 1A VSD -- -- 1 V Reverse Recovery Time (Note 3) VGS = 30V, IS = 1A dIF/dt = 100A/µs trr -- 23.2 -- ns Reverse Recovery Charge (Note 3) Qrr -- 14.3 -- nC Note: 1. Pulse width limited by safe operating area 2. L = 1mH, IAS = 7A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C 3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 4. Switching time is essentially independent of operating temperature. |
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