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TSM680P06DPQ56RLG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM680P06DPQ56RLG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 6 page TSM680P06D Taiwan Semiconductor Document Number:DS_P0000162 2 Version: A15 ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA BVDSS -60 -- -- V Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -1.2 -1.6 -2.5 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = -60V, VGS = 0V IDSS -- -- -1 µA VDS = -48V, Tc = 125ºC -- -- -10 Drain-Source On-State Resistance VGS = -10V, ID = -6A RDS(on) -- 54 68 m Ω VGS = -4.5V, ID = -3A -- 90 110 Forward Transconductance VDS = -10V, ID = -6A gfs -- 8.5 -- S Dynamic (Note 5) Total Gate Charge VDS = -30V, ID = -6A, VGS = -10V Qg -- 16.4 -- nC Gate-Source Charge Qgs -- 2.8 -- Gate-Drain Charge Qgd -- 3.6 -- Input Capacitance VDS = -30V, VGS = 0V, f = 1.0MHz Ciss -- 870 -- pF Output Capacitance Coss -- 70 -- Reverse Transfer Capacitance Crss -- 42 -- Switching (Note 6) Turn-On Delay Time VDD = -30V, ID = -1A, RGEN =6Ω td(on) -- 8.3 -- ns Turn-On Rise Time tr -- 42.4 -- Turn-Off Delay Time td(off) -- 64.6 -- Turn-Off Fall Time tf -- 16.4 -- Source-Drain Diode (Note 4) Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode in the MOSFET IS -- -- -12 A Maximum Pulse Drain-Source Diode Forward Current ISM -- -- -48 A Diode-Source Forward Voltage VGS = 0V, IS = -1A VSD -- -- -1 V Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 0.1mH, IAS = -12A, VDD = -25V, RG = 25Ω, Starting TJ = 25 oC 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. |
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