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TSM500P02CXRFG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM500P02CXRFG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 5 page  TSM500P02CX 20V P-Channel Power MOSFET 2/5 Version: A14 Electrical Specifications (T C = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA BVDSS -20 -- -- V Drain-Source On-State Resistance VGS = -4.5V, ID = -3A RDS(ON) -- 42 50 m Ω VGS = -2.5V, ID = -2A -- 57 65 VGS = -1.8V, ID = -1A -- 75 85 Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -0.3 -0.6 -0.8 V Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V IDSS -- -- -1 µA VDS = -16V, TJ = 125°C -- -- -10 Gate Body Leakage VGS = ±10V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance (Note 2) VDS = -10V, ID = -3A gfs -- 7 -- S Dynamic Total Gate Charge (Note 2,3) VDS = -10V, ID = -3A, VGS = -4.5V Qg -- 9.6 -- nC Gate-Source Charge (Note 2,3) Qgs -- 1.6 -- Gate-Drain Charge (Note 2,3) Qgd -- 2 -- Input Capacitance VDS = -10V, VGS = 0V, f = 1.0MHz Ciss -- 850 -- pF Output Capacitance Coss -- 70 -- Reverse Transfer Capacitance Crss -- 55 -- Switching Turn-On Delay Time (Note 2,3) VDD = -10V, ID = -1A, VGS = -4.5V, RGEN =25Ω td(on) -- 6 -- ns Turn-On Rise Time (Note 2,3) tr -- 21.6 -- Turn-Off Delay Time (Note 2,3) td(off) -- 51 -- Turn-Off Fall Time (Note 2,3) tf -- 13.8 -- Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode in the MOSFET IS -- -- -4.7 A Maximum Pulse Drain-Source Diode Forward Current ISM -- -- -18.8 A Diode-Source Forward Voltage VGS = 0V, IS = -1A VSD -- -- -1 V Note: 1. Pulse width limited by safe operating area 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 3. Switching time is essentially independent of operating temperature. |
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