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TSM340N06CZC0G Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM340N06CZC0G Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 9 page  TSM340N06 60V N-Channel Power MOSFET 2/9 Version: D14 Thermal Performance Parameter Symbol Limit Unit IPAK/DPAK ITO-220 TO-220 Thermal Resistance - Junction to Case RӨJC 3.1 4.7 1.9 ° C/W Thermal Resistance - Junction to Ambient RӨJA 62 ° C/W Electrical Specifications (T C = 25℃ unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 60 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 15A RDS(ON) -- 28 34 m Ω VGS = 4.5V, ID = 10A -- 33 40 Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.2 1.7 2.5 V Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V IDSS -- -- 1 µA VDS = 48V, TJ = 125°C -- -- 10 Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance VDS = 10V, ID = 8A gfs -- 8 -- S Dynamic Total Gate Charge (Note 4,5) VDS = 30V, ID = 20A, VGS = 10V Qg -- 16.6 -- nC Gate-Source Charge (Note 4,5) Qgs -- 2.2 -- Gate-Drain Charge (Note 4,5) Qgd -- 3.9 -- Input Capacitance VDS = 30V, VGS = 0V, f = 1MHz Ciss -- 1180 -- pF Output Capacitance Coss -- 68 -- Reverse Transfer Capacitance Crss -- 45 -- Gate Resistance VGS=0V, VDS=0V, f=1MHz Rg -- 2.1 -- Ω Switching Turn-On Delay Time (Note 4,5) VDD=30V , VGS=10V , RG=6W, ID=-1A td(on) -- 4.6 -- ns Turn-On Rise Time (Note 4,5) tr -- 14.8 -- Turn-Off Delay Time (Note 4,5) td(off) -- 27.2 -- Turn-Off Fall Time (Note 4,5) tf -- 7.8 -- Source-Drain Diode Ratings and Characteristic Continuous Drain-Source Diode VG=VD=0V , Force Current IS -- -- 25 A Pulse Drain-Source Diode ISM -- -- 100 A Diode-Source Forward Voltage VGS = 0V, IS = 1A VSD -- -- 1 V Reverse Recovery Time (Note 4) VGS = 0V, IS = 1A dIF/dt = 100A/µs trr -- 17 -- ns Reverse Recovery Charge (Note 4) Qrr -- 12 -- nC Note: 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. L = 0.1mH, IAS = 22A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 5. Switching time is essentially independent of operating temperature. |
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