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TSM70N900CIC0G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM70N900CIC0G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 9 page  TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET 1/9 Version: C14 ITO-220 TO-251 (IPAK) Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Features ● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance Block Diagram N-Channel MOSFET Application ● Power Supply. ● Lighting Ordering Information Part No. Package Packing TSM70N900CI C0G ITO-220 50pcs / Tube TSM70N900CH C5G TO-251 75pcs / Tube TSM70N900CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (TC = 25 oC unless otherwise noted) Parameter Symbol Limit Unit ITO-220 IPAK/DPAK Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS ±30 V Continuous Drain Current (Note 1) TC = 25 oC ID 4.5 A Pulsed Drain Current (Note 2) IDM 13.5 A Total Power Dissipation @ TC=25 oC PDTOT 20 50 W Single Pulsed Avalanche Energy (Note 3) EAS 64 mJ Single Pulsed Avalanche Current (Note 3) IAS 1.6 A Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 oC Pin Definition: 1. Gate 2. Drain 3. Source |
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