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TSM60N03 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Part # TSM60N03
Description  30V N-Channel Power MOSFET
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM60N03 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM60N03
30V N-Channel Power MOSFET
2/4
Version: A12
Electrical Specifications (TC = 25℃ unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
30
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 19A
RDS(ON)
--
3.5
4.5
m
Ω
VGS = 4.5V, ID = 16A
RDS(ON)
--
4.6
5.8
m
Ω
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
1.15
--
2.2
V
Zero Gate Voltage Drain Current
VDS = 30V, VGS = 0V
IDSS
--
--
1
uA
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Dynamic
Total Gate Charge
VDS = 15V, ID = 19A,
VGS = 4.5V
Qg
--
12
--
nC
Gate-Source Charge
Qgs
--
5.4
--
Gate-Drain Charge
Qgd
--
4.6
--
Input Capacitance
VDS = 15V, VGS = 0V,
f = 1.0MHz
Ciss
--
1700
--
pF
Output Capacitance
Coss
--
350
--
Reverse Transfer Capacitance
Crss
--
140
--
Switching
Turn-On Delay Time
VGS = 4.5V, VDS = 15V,
RG = 1.5Ω, ID = 10A
td(on)
--
25
--
nS
Turn-On Rise Time
tr
--
20
--
Turn-Off Delay Time
td(off)
--
25
--
Turn-Off Fall Time
tf
--
15
--
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
Voltage
VGS = 0V, IS = 10A
VSD
-
0.8
1.2
V
Reverse Recovery Time
IS = 10A, TJ = 25 ℃
dI/dt = 100A/us
tfr
25
nS
Reverse Recovery Charge
Qfr
17
nC
Notes:
1.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
2.
RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA
is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air
3.
The maximum current rating is limited by package


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