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TSD2150A Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSD2150A Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page TSD2150A Low Vcesat NPN Transistor 1/4 Version: C14 SOT-89 PRODUCT SUMMARY BVCBO 80V BVCEO 50V IC 3A VCE(SAT) 0.5V @ IC / IB = 2A / 200mA Features ● Low VCE(SAT) 0.1 @ IC / IB = 1A / 50mA (Typ.) ● Complementary part with TSB1424A Ordering Information Part No. Package Packing TSD2150ACY RM SOT-89 1Kpcs / 7” Reel Structure ● Epitaxial Planar Type ● NPN Silicon Transistor Absolute Maximum Ratings (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Current DC IC 3 A Pulse 6 (note1) Collector Power Dissipation PD 0.6 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw=10ms, Duty≤50% 2. When mounted on a 40 x 50 x 0.7mm ceramic board. Electrical Specifications (TA=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 50uA, IE = 0 BVCBO 80 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 50 -- -- V Emitter-Base Breakdown Voltage IE = 50uA, IC = 0 BVEBO 6 -- -- V Collector Cutoff Current VCB = 60V, IE = 0 ICBO -- -- 0.1 µA Emitter Cutoff Current VEB = 3V, IC = 0 IEBO -- -- 0.1 µA Collector-Emitter Saturation Voltage IC / IB = 1A / 50mA VCE(SAT) -- 0.1 0.25 V IC / IB = 2A / 200mA VCE(SAT) -- 0.25 0.5 Base-Emitter Saturation Voltage IC / IB = 2A / 200mA VBE(SAT) -- -- 2 V DC Current Transfer Ratio VCE = 2V, IC = 100mA hFE 1 180 -- -- VCE = 2V, IC = 500mA hFE 2 200 -- 400 VCE = 2V, IC = 1A hFE 3 150 -- -- Transition Frequency VCE =5V, IE=0.1A, f=100MHz fT -- 90 -- MHz Output Capacitance VCB = 10V, f=1MHz Cob -- 45 -- pF Note: Pulse test: pulse width ≤380µs, Duty cycle≤2% Pin Definition: 1. Base 2. Collector 3. Emitter |
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