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LTC1475IS8 Datasheet(PDF) 3 Page - Linear Technology |
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LTC1475IS8 Datasheet(HTML) 3 Page - Linear Technology |
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3 / 20 page  3 LTC1474/LTC1475 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VFB Feedback Voltage ILOAD = 50mA q 1.205 1.230 1.255 V LTC1474/LTC1475 VOUT Regulated Output Voltage ILOAD = 50mA LTC1474-3.3/LTC1475-3.3 q 3.234 3.300 3.366 V LTC1474-5/LTC1475-5 q 4.900 5.000 5.100 V IFB Feedback Current q 030 nA LTC1474/LTC1475 Only ISUPPLY No Load Supply Current (Note 3) ILOAD = 0 (Figure 1 Circuit) 10 µA ∆VOUT Output Voltage Line Regulation VIN = 7V to 12V, ILOAD = 50mA 5 20 mV Output Voltage Load Regulation ILOAD = 0mA to 50mA 2 15 mV Output Ripple ILOAD = 10mA 50 mVP-P IQ Input DC Supply Current (Note 2) (Exclusive of Driver Gate Charge Current) Active Mode (Switch On) VIN = 3V to 18V 100 175 µA Sleep Mode (Note 3) VIN = 3V to 18V 9 15 µA Shutdown VIN = 3V to 18V, VRUN = 0V 6 12 µA RON Switch Resistance ISW = 100mA 1.4 1.6 Ω IPEAK Current Comp Max Current Trip Threshold RSENSE = 0Ω 325 400 mA RSENSE = 1.1Ω 70 76 85 mA VSENSE Current Comp Sense Voltage Trip Threshold q 90 100 110 mV VHYST Voltage Comparator Hysteresis 5mV tOFF Switch Off-Time VOUT at Regulated Value 3.5 4.75 6.0 µs VOUT = 0V 65 µs VLBI, TRIP Low Battery Comparator Threshold q 1.16 1.23 1.27 V VRUN Run/ON Pin Threshold 0.4 0.7 1.0 V VLBI, OFF OFF Pin Threshold (LTC1475 Only) 0.4 0.7 1.0 V ILBO, SINK Sink Current into Pin 2 VLBI = 0V, VLBO = 0.4V 0.45 0.70 mA IRUN, SOURCE Source Current from Pin 8 VRUN = 0V 0.4 0.8 1.2 µA ISW, LEAK Switch Leakage Current VIN = 18V, VSW = 0V, VRUN = 0V 0.015 1 µA ILBI, LEAK Leakage Current into Pin 3 VLBI = 18V, VIN = 18V 0 0.1 µA ILBO, LEAK Leakage Current into Pin 2 VLBI = 2V, VLBO = 5V 0 0.5 µA ELECTRICAL CHARACTERISTICS TA = 25°C, VIN = 10V, VRUN = open, RSENSE = 0, unless otherwise noted. The q denotes specifications which apply over the full operating temperature range. Note 1: TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formulas: LTC1474CS8/LTC1475CS8: TJ = TA + (PD • 110°C/W) LTC1474CMS8/LTC1475CMS8: TJ = TA + (PD • 150°C/W) Note 2: Dynamic supply current is higher due to the gate charge being delivered at the switching frequency. See Applications Information. Note 3: No load supply current consists of sleep mode DC current (9 µA typical) plus a small switching component (about 1 µA for Figure 1 circuit) necessary to overcome Schottky diode and feedback resistor leakage. |
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