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BAV99DW-7-F Datasheet(PDF) 2 Page - Diodes Incorporated |
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BAV99DW-7-F Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 4 page BAV99DW Document number: DS30145 Rev. 15 - 2 2 of 4 www.diodes.com November 2012 © Diodes Incorporated BAV99DW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 75 V RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current (Note 6) IFM 215 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0 μs IFSM 2.0 A @ t = 1.0ms 1.0 @ t = 1.0s 0.5 Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) PD 200 mW Power Dissipation (Note 7) PD 300 mW Thermal Resistance Junction to Ambient Air (Note 6) RθJA 625 °C/W Thermal Resistance Junction to Ambient Air (Note 7) RθJA 417 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 8) V(BR)R 75 ⎯ V IR = 2.5μA Forward Voltage VF ⎯ 0.715 V IF = 1.0mA ⎯ 0.855 IF = 10mA ⎯ 1.0 IF = 50mA ⎯ 1.25 IF = 150mA Reverse Current (Note 8) IR ⎯ 2.5 μA μA μA nA VR = 75V ⎯ 50 VR = 75V, TJ = +150°C ⎯ 30 VR = 25V, TJ = +150°C ⎯ 25 VR = 20V Total Capacitance CT ⎯ 2.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ⎯ 4.0 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Notes: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. 7. Device mounted on Alumina PCB, 0.4 inch x 0.3 inch x 0.024 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. 8. Short duration pulse test used to minimize self-heating effect. |
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