SQS401EN-T1-GE3 datasheet(4/14 Pages) VISHAY

Part #	SQS401EN-T1-GE3

Description	Automotive P-Channel 40 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQS401EN

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Vishay Siliconix

S11-2129 Rev. C, 31-Oct-11

4

Document Number: 65529

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Source Drain Diode Forward Voltage

Threshold Voltage

Drain Source Breakdown vs. Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

175

ID =11A

VGS =10 V

VGS =4.5 V

TJ - Junction Temperature (°C)

0.00

0.05

0.10

0.15

0.20

0.25

012

345

67

8

910

TJ = 25 °C

TJ = 150 °C

VGS - Gate-to-Source Voltage (V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1

0.01

0.001

0.1

10

100

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

- 0.4

- 0.1

0.2

0.5

0.8

1.1

- 50

- 25

0

25

50

75

100

125

150

175

ID = 250 µA

ID =5 mA

TJ - Temperature (°C)

- 50

- 48

- 46

- 44

- 42

- 40

- 50

- 25

0

25

50

75

100

125

150

175

ID =1mA

TJ - Junction Temperature (°C)

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SQS401EN-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix

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