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SI7157DP Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI7157DP Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 14 page Vishay Siliconix Si7157DP Document Number: 62860 S13-1665-Rev. A, 29-Jul-13 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com P-Channel 20-V (D-S) MOSFET FEATURES • TrenchFET® Gen III P-Channel Power MOSFET •100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • For Mobile Computing - Adaptor Switch - Battery Switch - Load Switch - Power Management Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 54 °C/W. d. Package limited. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) - 20 0.0016 at VGS = - 10 V - 60d 202.5 nC 0.0020 at VGS = - 4.5 V - 60d 0.0032 at VGS = - 2.5 V - 60d Ordering Information: Si7157DP-T1-GE3 (Lead (Pb)-free and Halogen-free) 1 2 3 4 5 6 7 8 S S S G D D D D 6.15 mm 5.15 mm PowerPAK® SO-8 Bottom View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 60d A TC = 70 °C - 60d TA = 25 °C - 46.5a, b TA = 70 °C - 37.2a, b Pulsed Drain Current (tp = 100 µs) IDM - 300 Continuous Source-Drain Diode Current TC = 25 °C IS - 60d TA = 25 °C - 5.6a, b Avalanche Current L = 0.1 mH IAS - 35 Single-Pulse Avalanche Energy EAS 61.25 mJ Maximum Power Dissipation TC = 25 °C PD 104 W TC = 70 °C 66.6 TA = 25 °C 6.25a, b TA = 70 °C 4a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)e, f 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t 10 s RthJA 15 20 °C/W Maximum Junction-to-Case Steady State RthJC 0.9 1.2 |
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