SI4010DY datasheet(3/11 Pages) VISHAY

Part #	SI4010DY

Description	N-Channel 30 V (D-S) MOSFET

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Si4010DY

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Vishay Siliconix

S13-2179-Rev. A, 14-Oct-13

3

Document Number: 62915

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

20

40

60

80

100

0.0

0.5

1.0

1.5

2.0

2.5

V

DS - Drain-to-Source Voltage (V)

V

GS = 10 V thru 4 V

V

GS = 2 V

V

GS = 3 V

0.0020

0.0025

0.0030

0.0035

0.0040

0.0045

0

16

32

48

64

80

I

D - Drain Current (A)

V

GS = 4.5 V

V

GS = 10 V

0

2

4

6

8

10

0

11

22

33

44

55

Q

g - Total Gate Charge (nC)

V

DS = 15 V

V

DS = 20 V

V

DS = 10 V

I

D = 10 A

0

20

40

60

80

100

0.0

1.0

2.0

3.0

4.0

5.0

V

GS - Gate-to-Source Voltage (V)

T

C = 25 °C

T

C = 125 °C

T

C = - 55 °C

0

800

1600

2400

3200

4000

0

5

10

15

20

25

30

V

DS - Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.7

0.9

1.1

1.3

1.5

1.7

- 50

- 25

0

25

50

75

100

125

150

T

J - Junction Temperature (°C)

I

D = 15 A

V

GS = 10 V

V

GS = 4.5 V

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