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SI3437DV Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI3437DV Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 12 page Vishay Siliconix Si3437DV Document Number: 73899 S09-0766-Rev. B, 04-May-09 www.vishay.com 1 P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) - 150 0.75 at VGS = - 10 V - 1.4 8 nC 0.79 at VGS = - 6 V - 1.3 Notes: a. TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 150 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 1.4 A TC = 70 °C - 1.1 TA = 25 °C - 1.1b,c TA = 70 °C - 0.88b,c Pulsed Drain Current IDM - 5 Continuous Source-Drain Diode Current TC = 25 °C IS - 2.6 TA = 25 °C 1.6b,c Avalanche Current L = 0.1 mH IAS 5 Single-Pulse Avalanche Energy EAS 1.25 mJ Maximum Power Dissipation TC = 25 °C PD 3.2 W TC = 70 °C 2.1 TA = 25 °C 2b,c TA = 70 °C 1.25b,c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 51 62.5 °C/W Maximum Junction-to-Foot Steady State RthJF 32 39 Marking Code AH XXX Lot Traceability and Date Code Part # Code Ordering Information: Si3437DV-T1-E3 (Lead (Pb)-free) Si3437DV-T1-GE3 (Lead (Pb)-free and Halogen-free) TSOP-6 Top View 6 4 1 2 3 5 3 mm 2.85 mm D D D D S G S G D P-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition •TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies |
Similar Part No. - SI3437DV_15 |
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Similar Description - SI3437DV_15 |
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