VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series

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Vishay Semiconductors

Revision: 11-Apr-14

3

Document Number: 94513

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

12

W

Maximum average gate power

3

Maximum peak gate current

3A

Maximum peak negative



gate voltage

10

V

Maximum required DC



gate voltage to trigger

Anode supply = 6 V,



4

2.5

1.7

Maximum required DC



gate current to trigger

270

mA

150

80

Maximum gate voltage



that will not trigger

0.3

V

Maximum gate current



that will not trigger

10

mA

Maximum rate of rise of



turned-on current

dI/dt

300

A/μs

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VSK.136 VSK.142 VSK.162 UNITS

Maximum junction operating



temperature range

-40 to 125

°C

Maximum storage



temperature range

-40 to 150

Maximum thermal resistance,



junction to case per junction

DC operation

0.18

0.18

0.16

K/W

Maximum thermal resistance,



case to heatsink per module

Mounting surface, smooth, flat and greased

0.05

Mounting



torque ± 10 %

IAP to heatsink

A mounting compound is recommended and

the torque should be rechecked after a period of



3 hours to allow for the spread of the

compound. Lubricated threads.

4 to 6

Nm

busbar to IAP

Approximate weight

200

g

7.1

oz.

Case style

INT-A-PAK

R CONDUCTION PER JUNCTION

DEVICES

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

UNITS

180°

120°

90°

60°

30°

180°

120°

90°

60°

30°

VSK.136

0.007

0.01

0.013

0.0155

0.017

0.009

0.012

0.014

0.015

0.017

K/W

VSK.142

0.0019

0.0019

0.0020

0.0020

0.0021

0.0018

0.0022

0.0023

0.0023

0.0020

VSK.162

0.0030

0.0031

0.0032

0.0033

0.0034

0.0029

0.0036

0.0039

0.0041

0.0040