VS-ST083SP Series

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Vishay Semiconductors

Revision: 26-Mar-14

3

Document Number: 94334

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note





BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum critical rate of rise of off-state voltage

dV/dt

higher value available on request

500

V/μs

Maximum peak reverse and



off-state leakage current

30

mA

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

40

W

Maximum average gate power

5

Maximum peak positive gate current

5A

Maximum peak positive gate voltage

20

V

Maximum peak negative gate voltage

5

Maximum DC gate current required to trigger

200

mA

Maximum DC gate voltage required to trigger

3V

Maximum DC gate current not to trigger

20

mA

Maximum DC gate voltage not to trigger

0.25

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction operating temperature range

-40 to 125

°C

Maximum storage temperature range

-40 to 150

Maximum thermal resistance, junction to case

DC operation

0.195

K/W

Maximum thermal resistance, case to heatsink

Mounting surface, smooth, flat and greased

0.08

Mounting torque, ± 10 %

Non-lubricated threads

15.5

(137)

N · m

(lbf · in)

Lubricated threads

14

(120)

Approximate weight

130

g

Case style

See dimensions - link at the end of datasheet

TO-209AC (TO-94)

R

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

TEST CONDITIONS

UNITS

180°

0.034

0.025

K/W

120°

0.041

0.042

90°

0.052

0.056

60°

0.076

0.079

30°

0.126

0.127