VS-30TPS..PbF Series, VS-30TPS..-M3 Series

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Vishay Semiconductors

Revision: 06-Feb-14

5

Document Number: 94386

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 9 - Gate Characteristics

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

Square Wave Pulse Duration (s)

Steady State Value

(DC Operation)

Single Pulse

D = 0.50

D = 0.33

D = 0.25

D = 0.17

D = 0.08

30TPS.. Series

0.1

1

10

100

0.001

0.01

0.1

1

10

100

(b )

(a )

(4)

(3)

(2)

(1)

Instantaneous Gate Current (A)

Frequency Limited by PG(AV)

IGD

VGD

30TPS.. Series

tr = 1 µs, tp >= 6 µs

<= 30% rated di/ dt: 10 V, 65 ohms

b)Recommend ed load line for

rated di/ dt: 10 V, 20 ohms

tr = 0.5 µs, tp >= 6 µs

a)Recommended load line for

Rec tangular gate p ulse

(1) PGM = 40 W, tp = 1 ms

(2) PGM = 20 W, tp = 2 ms

(3) PGM = 8 W, tp = 5 ms

(4) PGM = 4 W, tp = 10 ms