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T70RIA120 Datasheet(PDF) 3 Page - Vishay Siliconix |
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T70RIA120 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 14 page Document Number: 93756 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 03-Jun-08 3 T..RIA Series Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A Vishay High Power Products Note (1) Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. T90RIA80S90 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum 15 mA RMS isolation voltage VISOL 50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s 3500 V Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % rated VDRM (1) 500 V/µs TRIGGERING PARAMETER SYMBOL TEST CONDITIONS T50RIA T70RIA T90RIA UNITS Maximum peak gate power PGM TJ = TJ maximum, tp ≤ 5 ms 10 12 12 W Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz 2.5 3 3 Maximum peak gate current IGM TJ = TJ maximum, tp ≤ 5 ms 2.5 3 3 A Maximum peak negative gate voltage -VGT 10 10 10 V Maximum required DC gate voltage to trigger VGT TJ = - 40 °C Anode supply = 6 V, resistive load; Ra = 1 Ω 4.0 4.0 4.0 V TJ = 25 °C 2.5 2.5 2.5 TJ = TJ maximum 1.5 1.5 1.5 Maximum required DC gate current to trigger IGT TJ = - 40 °C 250 270 270 mA TJ = 25 °C 100 120 120 TJ = TJ maximum 50 60 60 Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.2 0.2 0.2 V Maximum gate current that will not trigger IGD 5.0 6.0 6.0 mA Maximum rate of rise of turned-on current dI/dt VD = 0.67 rated VDRM, ITM = 2 x rated dI/dt Ig = 400 mA for T50RIA and Ig = 500 mA for T70RIA/T90RIA; tr < 0.5 µs, tp ≥ 6 µs For repetitive value use 40 % non-repetitive Per JEDEC STD. RS397, 5.2.2.6 200 200 200 A/µs 180 180 180 160 160 160 150 150 150 |
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