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BC807-16W-B0RFG Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BC807-16W-B0RFG Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 6 page - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS complian - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code - Case: SOT- 323 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Weight: 0.005 grams (approximately) SYMBOL UNIT PD mW VCBO V VCEO V VEBO V IC A RθJA K/W TJ , TSTG °C Notes: 1. Transistor mounted on a FR4 printed-circuit board SYMBOL UNIT Collector-Base Breakdown Voltage V(BR)CBO V Collector-Emitter Breakdown Voltage V(BR)CEO V Emitter-Base Breakdown Voltage V(BR)EBO V nA µA Emitter Cut-off Current IEBO nA IB = 50 mA VCE(sat) V Transition Frequency VCE = 5 V IC = 10 mA f = 100MHz fT MHz Document Number: DS_S1404006 200mW, PNP Small Signal Transistor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) SOT-323 BC807-16W/-25W/-40W MECHANICAL DATA FEATURES Power Dissipation 200 - Epitaxial planar die construction - Surface mount device type Taiwan Semiconductor VALUE Small Signal Product 50 45 5 0.5 625 -55 to + 150 Version: B14 PARAMETER 250 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 40 100 160 400 250 600 80 - DC Current Gain at -VCE = 1 V , -IC = 100 mA at -VCE = 1 V , -IC = 500 mA -16W -25W -40W hFE 5 at VEB = 5 V Collector-Emitter Saturation Voltage - 100 at -IC = 500mA - 0.7 at VCB = 20 V , TJ = 150 oC ICBO 50 45 5 - MIN MAX at VCB = 20 V - - - 100 at -IC = 10 µA at -IC = 10 mA at -IE = 10 µA Collector Cut-off Current |
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