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DSL12AW Datasheet(PDF) 3 Page - Diodes Incorporated |
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DSL12AW Datasheet(HTML) 3 Page - Diodes Incorporated |
3 / 6 page DSL12AW Document Number: DS31644 Rev. 2 - 2 3 of 6 www.diodes.com February 2011 © Diodes Incorporated DSL12AW Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO -12 -35 ⎯ V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage (Note 5) BVCEO -12 -20 ⎯ V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO -5 -8.3 ⎯ V IE = -100μA, IC = 0 Collector Cutoff Current ICBO ⎯ -1 -100 nA VCB = -12V, IE = 0 Collector Cutoff Current ICES ⎯ -1 -100 nA VCE = -12V, VBE = 0 Emitter Cutoff Current IEBO ⎯ -1 -100 nA VEB = -5V, IC = 0 ON CHARACTERISTICS DC Current Gain (Note 5) hFE 100 100 100 175 165 160 ⎯ 300 ⎯ V VCE = -1.5V, IC = -0.5A VCE = -1.5V, IC = -0.8A VCE = -1.5V, IC = -1A Collector-Emitter Saturation Voltage (Note 5) VCE(sat) ⎯ ⎯ ⎯ -70 -95 -115 -160 -235 -290 mV IC = -0.5A, IB = -10mA IC = -0.8A, IB = -16mA IC = -1A, IB = -20mA Collector-Emitter Saturation Resistance RCE(sat) ⎯ ⎯ 290 m Ω IC = -1A, IB = -20mA Base-Emitter Saturation Voltage VBE(sat) ⎯ ⎯ -0.95 V IC = -1A, IB = -20mA Base-Emitter Turn On Voltage VBE(on) ⎯ ⎯ -0.95 V VCE = -1.5V, IC = -1A Output Capacitance Cobo ⎯ ⎯ 65 pF VCB = -1.5V, f = 1.0MHz Current Gain-Bandwidth Product fT ⎯ 180 ⎯ MHz VCE = -5V, IC = -100mA, f = 100MHz Notes: 5. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%. 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 02 4 6 8 10 12 V , COLLECTOR-EMITTER VOLTAGE (V) CE Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage I = 1mA B I = 2mA B I = 3mA B I = 4mA B I = 5mA B 0 50 100 150 200 250 300 350 400 450 500 0.001 0.01 0.1 1 I , COLLECTOR CURRENT (A) C Fig. 5 Typical DC Current Gain vs. Collector Current T = -55°C A V = -1.5V CE T = 25°C A T = 85°C A T = 125°C A T = 150°C A |
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Similar Description - DSL12AW_15 |
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