1

LTC1154

DESCRIPTIO

S

FEATURE

High-Side Micropower

MOSFET Driver

s

Fully Enhances N-Channel Power MOSFETs

s

8

s

85

s

No External Charge Pump Capacitors

s

4.5V to 18V Supply Range

s

Short-Circuit Protection

s

Thermal Shutdown via PTC Thermistor

s

Status Output Indicates Shutdown

s

Available in 8-Pin SOIC

The LTC1154 single high-side gate driver allows using low

cost N-channel FETs for high-side switching applications.

An internal charge pump boosts the gate drive voltage

above the positive rail, fully enhancing an N-channel MOS

switch with no external components. Micropower opera-

tion, with 8

µA standby current and 85µA operating cur-

rent, allows use in virtually all systems with maximum

efficiency.

Included on chip is programmable over-current sensing.

A time delay can be added to prevent false triggering on

high in-rush current loads. An active high shutdown input

is also provided and interfaces directly to a standard PTC

thermistor for thermal shutdown. An open-drain output is

provided to report switch status to the

µP. An active low

enable input is provided to control multiple switches in

banks.

The LTC1154 is available in both 8-pin DIP and 8-pin SOIC

packages.

APPLICATI

TYPICAL

S

APPLICATI

s

Laptop Computer Power Switching

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SCSI Termination Power Switching

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Cellular Telephone Power Management

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Battery Charging and Management

s

High-Side Industrial and Automotive Switching

s

Stepper Motor and DC Motor Control

Standby Supply Current

Ultra-Low Voltage Drop High-Side Switch

with Short-Circuit Protection

SUPPLY VOLTAGE (V)

0

0

5

15

20

25

50

35

515

LTC1153 • TA02

10

40

45

30

10

20

IRLR024

0.036

Ω*

LTC1154 • TA01

5V

LOAD

µP

5V

200k**

0.1

µF**

2.7A MAX

51k

IN

EN

STATUS

GND

DS

G

SD

LTC1154

ALL COMPONENTS SHOWN ARE SURFACE MOUNT.

IMS026 INTERNATIONAL MANUFACTURING SERVICE, INC. (401) 683-9700

NOT REQUIRED IF LOAD IS RESISTIVE OR INDUCTIVE.

*

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