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UG2JA Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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UG2JA Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page CREAT BY ART - Fast forward recovery time for high frequency operation - Negligible switching losses - Ultrafast reverse recovery time - Reduces switching and conduction losses - High surge current capability - Halogen-free according to IEC 61249-2-21 definition Designed for high frequency switching mode inverters and converters for consumer, computers,lighting, automotive and telecommunications. The low IRRM is an immediately advantage to reduce the switching losses in associated of switching devices. Also suitable as priority protection and other rectifications purposes. Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test SYMBOL UNIT VRRM V VRMS V VDC V IF(AV) A VFP V Cj pF TJ OC TSTG OC Document Number: DS_D1404007 Version: A14 UG2JA Taiwan Semiconductor Surface Mount Ultra Fast Rectifiers FEATURES - Moisture sensitivity level: level 1, per J-STD-020 Polarity: Indicated by cathode band Weight: 0.07g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER UG2JA - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC DO-214AC (SMA) TYPICAL APPLICATIONS MECHANICAL DATA Case: DO-214AC (SMA) Maximum repetitive peak reverse voltage 600 Maximum RMS voltage 420 Maximum DC blocking voltage 600 Maximum average forward rectified current 2 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 40 A Maximum instantaneous forward voltage (Note 1) @ 2 A VF 1.30 V Maximum reverse current @ rated VR TJ=25 ℃ IR 2 μA 50 TJ=125 ℃ ns - 100 Reverse recovery time (Note 2) t rr Typ. Max. ns 40 55 Forward recovery voltage (Note 3) - 9 Forward recovery time (Note 3) t fr Typ. Max. Typical junction capacitance (Note 4) 20 Typical thermal resistance RθjL RθjA 25 70 OC/W Note 3: Forward Recovery Test Conditions: IF=2A, dIF/dt = 100A/µs, VFR =1.1 x VFmax Note 4: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Operating junction temperature range - 55 to +150 Storage temperature range - 55 to +150 Note 1: Pulse test with PW=300 μs, 1% duty cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A |
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