EGF1A, EGF1B, EGF1C, EGF1D

www.vishay.com

Vishay General Semiconductor

Revision: 16-Aug-13

3

Document Number: 88579

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.4

0.2

0.6

0.8

1.0

1.2

1.4

1.6

Instantaneous Forward Voltage (V)

0.01

0.1

10

1

100

1.8

T

Pulse Width = 300 µs

1 % Duty Cycle

T

60

40

20

0

100

80

0.01

0.1

10

1

100

1000

Percent of Rated Peak Reverse Voltage (%)

T

T

T

Reverse Voltage (V)

0.1

10

1

100

20

10

30

40

50

60

70

0

T

f = 1.0 MHz

V

0.01

0.1

10

1

100

100

10

1

0.1

t - Pulse Duration (s)

0.167 (4.24)

0.187 (4.75)

0.0065 (0.17)

0.015 (0.38)

0.030 (0.76)

0.060 (1.52)

0.196 (4.98)

0.226 (5.74)

0.094 (2.39)

0.114 (2.90)

0.100 (2.54)

0.118 (3.00)

0.040 (1.02)

0.066 (1.68)

0.098 (2.49)

0.108 (2.74)

0.006 (0.152) TYP.

DO-214BA (GF1)

0.076 (1.93)

MAX.

0.220 (5.58)

REF.

0.060 (1.52)

MIN.

Mounting Pad Layout

Cathode Band

0.066 (1.68)

MIN.