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TSF30L120C Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # TSF30L120C
Description  Trench Schottky Rectifier
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSF30L120C Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Mounting torque: 0.56 Nm max.
VRRM
V
dV/dt
V/μs
TYP
MAX
TYP
MAX
TYP
MAX
TYP
MAX
IF = 15A
TJ = 25°C
0.73
0.80
0.80
0.88
0.84
0.92
0.86
0.96
IF = 15A
TJ = 125°C
0.64
0.70
0.67
0.76
0.70
0.78
0.73
0.81
TJ = 25°C
-
250
-
250
-
100
-
100
μA
TJ = 125°C
725425315315
mA
RθJC
°C/W
TJ
°C
TSTG
°C
Document Number: DS_1411089
Version: B14
10000
120
150
A
ITO-220AB
- 55 to +150
- 55 to +150
IR
160
Maximum repetitive peak reverse voltage
Maximum average forward
rectified current
VF
Instantaneous forward
voltage per diode (Note1)
Operating junction temperature range
per device
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
per diode
TSF30L
200C
200
UNIT
15
100
TYPICAL APPLICATIONS
MECHANICAL DATA
Case:
ITO-220AB
Polarity:
As marked
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
TSF30L
100C
IF(AV)
PARAMETER
SYMBOL
Storage temperature range
30
Weight:
1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
TSF30L
120C
Voltage rate of change (Rated VR)
TSF30L
150C
TSF30L100C - TSF30L200C
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Instantaneous reverse current per
diode at rated reverse voltage
IFSM
A
V
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
44.5
Typical thermal resistance per diode


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